Вкратце: Откройте для себя полупроводниковое лазерное оборудование для подъема, передовое решение для неразрушающего разжижения слитков в полупроводниковой обработке.Эта передовая платформа на основе лазера предлагает точное разрезание сверхтонких слоев из сыпучих слитков, уменьшая количество отходов и повышая целостность подложки для устройств следующего поколения.
Связанные характеристики продукта:
Contact-free, non-destructive thinning for brittle materials like GaN, SiC, and sapphire.
Precision slicing of wafer-scale films with minimal material waste.
Automated control and beam shaping for seamless integration into fabrication workflows.
Supports R&D flexibility and mass production scalability.
Motion-synchronized scanning heads for precise energy delivery.
Reduces microcracking, bowing, and surface chipping risks.
Configurable with burst-mode or multi-pulse capabilities for smooth detachment.
Ideal for power electronics, RF systems, photonics, and micro-displays.
Вопросы:
What is the minimum thickness achievable with the Semiconductor Laser Lift-Off Equipment?
Typically between 10-30 microns, depending on the material, with potential for thinner results using modified setups.
Can the equipment slice multiple wafers from the same ingot?
Yes, the laser lift-off technique allows for serial extractions of multiple thin layers from one bulk ingot.
How does the system compare to diamond wire saws in terms of cost?
While initial capex may be higher, laser lift-off reduces consumable costs, substrate damage, and post-processing steps, lowering total cost of ownership long-term.