Манипулятор / исследования / Производственный класс
Толщина:
350 мкм±25 мкм
Деформация:
≤40 мкм
Шероховатость:
Ra≤1 нм
Диаметр:
4 дюйма, 99,5–100,0 мм
Характер продукции
4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate 4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate What are Silicon Carbide (SiC) Wafers & Substrates? Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust